Enjoy a curated selection of noteworthy research articles that are among the most read by top semiconductor companies—and learn how to stay on top of the latest innovations in the field to enhance your projects and accelerate your next discovery.
The semiconductor industry's relentless pursuit of innovation hinges on advancements in chemistry. From the foundational materials themselves to the intricate manufacturing processes, chemistry research drives the discovery of novel materials, optimizes etching and deposition techniques, ensures the ultra-high purity necessary for reliable devices, and more. Moreover, as sustainability becomes a critical concern, chemical research is leading the charge in developing eco-friendly manufacturing methods and recyclable materials, ensuring the industry's future is both technologically advanced and environmentally responsible.
In today's fiercely competitive semiconductor landscape, staying ahead means having access to the very latest scientific breakthroughs. Industry researchers must remain informed about cutting-edge developments at every stage of the production process, from raw material synthesis to final device fabrication. By leveraging the most recent findings in chemistry, researchers can accelerate their projects and drive the next generation of semiconductor technology.
We’ve compiled a roundup of relevant ACS journal articles that were among the most read by semiconductor industry professionals over the past year. Topics range from novel material synthesis and advanced etching techniques to innovative approaches for achieving ultra-high purity and sustainable manufacturing.
We hope these insights will enhance your current research and drive your work towards groundbreaking discoveries. If you are interested in more articles like these, be sure to sign up for our monthly ACS Industry Insider newsletter and stay informed of the latest breakthroughs in your field.
Trending Research Among Semiconductor Professionals
Area-Selective Deposition: Fundamentals, Applications, and Future Outlook
Gregory N. Parsons and Robert D. Clark
Chemistry of Materials
DOI: 10.1021/acs.chemmater.0c00722
Selectivity between SiO2 and SiNx during Thermal Atomic Layer Etching Using Al(CH3)3/HF and Spontaneous Etching Using HF and Effect of HF + NH3 Codosing
Marcel Junige* and Steven M. George
Chemistry of Materials
DOI: 10.1021/acs.chemmater.4c01040
Role of Oxygen in Amorphous Carbon Hard Mask Plasma Etching (Open Access)
Hee-Jung Yeom, Min Young Yoon, Daehan Choi, Youngseok Lee, Jung-Hyung Kim*, Shin-Jae You*, and Hyo-Chang Lee*
ACS Omega
DOI: 10.1021/acsomega.3c02438
Etching and Chemical Control of the Silicon Nitride Surface
Marine Brunet, Damien Aureau, Paul Chantraine, François Guillemot, Arnaud Etcheberry, Anne Chantal Gouget-Laemmel*, and François Ozanam*
ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.6b12880
The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins
Chappel S. Thornton*, Blair Tuttle, Emily Turner, Mark E. Law, Sokrates T. Pantelides, George T. Wang*, and Kevin S. Jones*
ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.2c05470
Atomic Layer Etching: Rethinking the Art of Etch
Keren J. Kanarik*, Samantha Tan, and Richard A. Gottscho
The Journal of Physical Chemistry Letters
DOI: 10.1021/acs.jpclett.8b00997
Mechanisms of Thermal Atomic Layer Etching
Steven M. George*
Accounts of Chemical Research
DOI: 10.1021/acs.accounts.0c00084
Etching Mechanism of Vitreous Silicon Dioxide in HF-Based Solutions
D. Martin Knotter
Journal of the American Chemical Society
DOI: 10.1021/ja993803z
Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated SiN Films Using HF/H2 and CF4/H2 Plasmas
Shih-Nan Hsiao*, Nikolay Britun, Thi-Thuy-Nga Nguyen, Makoto Sekine, and Masaru Hori
ACS Applied Electronic Materials
DOI: 10.1021/acsaelm.3c01258
Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2
Elena O. Filatova*, Aleksei S. Konashuk*, Sergei S. Sakhonenkov, Aidar U. Gaisin, Nadiia M. Kolomiiets, Valeri V. Afanas’ev, and Harold F. W. Dekkers
The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.0c03605
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