Enjoy a selection of outstanding research in semiconductor patterning technology, featuring innovative techniques, materials, and processes aimed to provide invaluable insights for scientists striving to push the boundaries of what’s possible.
The relentless pursuit of miniaturization and enhanced performance in semiconductor devices hinges on breakthroughs in precision patterning. As chip architectures become increasingly complex, the ability to create intricate, nanoscale features with unparalleled accuracy is no longer a luxury—it is a necessity.
We are excited to present you with a selection of outstanding research in patterning technology, featuring innovative techniques, materials, and processes aimed to provide invaluable insights for semiconductor scientists striving to push the boundaries of what’s possible.
ACS Publications Article Highlights: Semiconductor Patterning
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Rational Design and Fabrication of Block Copolymer Templated Hafnium Oxide Nanostructures
“… In this study, we expand the SIS (sequential infiltration synthesis) library with the development of hafnium oxide SIS and demonstrate HfOx nanostructure fabrication via SIS within block copolymer (BCP) templates…” Read more.
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“Dual-Tone” Area-Selective Deposition: Selectivity Inversion of Polymer on Patterned Si/SiO2 Starting Surfaces
“… In this work, we define the concept of “dual-tone ASD (Area-selective deposition),” where a patterned surface is tuned to enable ASD on one of two adjacent surfaces while avoiding growth on the other surface. For the example case in this work..." Read more.
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Area Selective Deposition of Ru on W/SiO2 Nanopatterns via Sequential Reactant Dosing and Thermal Defect Correction
“…This study employs an advanced sequential reactant dosing combined with a thermal defect correction strategy to obtain high selectivity and film quality. Through the adoption of sequential reactant dosing, chemisorption becomes the prevailing mechanism and effectively prevents…” Read more.
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Area-Selective Atomic Layer Deposition of Ruthenium via Reduction of Interfacial Oxidation
“… In this study, Ru ASD is demonstrated using two-step ALD with the sequential use of H2 and O2 as counter-reactants and dimethylamino-trimethylsilane (DMATMS) as a precursor inhibitor. Both theoretical and experimental results demonstrate that…” Read more.
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Area-Selective Etching of Poly(lactic acid) Films via Catalytic Hydrogenolysis and Cracking
“…Here, we study the ASE (area-selective etching) of poly(lactic acid) (PLA) in two nonoxidative atmospheres: inert atmosphere where decomposition by cracking occurs, and H2 atmosphere where the polymer is decomposed by hydrogenolysis. Ni, NiO, Ir, and Pt films were identified as..." Read more.
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In Situ Monitoring Surface Reactions in Cryogenic Atomic Layer Etching of Silicon Nitride by Alternating Surface Modification with Hydrogen Fluoride Dose and Ar Plasmas
“Cryogenic atomic layer etching (ALE) represents a promising technique for achieving subnanoscale material removal in semiconductor processes, owing to its unique self-limiting surface-adsorbing reactions. This paper presents a cryogenic ALE method for SiN, utilizing..." Read more.
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Control of Presentation of Functional Ultraviolet Absorbers to the Surface of Photoresist Polymers Using Low Surface Energy Polymers
"...polymers with fluorine-containing end groups will selectively accumulate at the polymer–air interface when the second polymer is not fluorinated, but what happens when both polymers in a bilayer film are fluorinated? To test this, we prepared polymers via reversible addition…” Read more.
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Special Issue: Precision Patterning
Want more research articles on precision patterning? This Special Issue from Chemistry of Materials showcases a selection of innovative research in patterning technology published in the journal in the past year. We hope the featured work inspires further advancements in this fast-moving field.
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